Datasheet4U.com

PH3134-20L Datasheet PDF

MACOM Technology Solutions PH3134-20L

Radar Pulsed Power Transistor

Part No. PH3134-20L
Datasheet PH3134-20L Download
Manufacturer
MACOM Technology Solutions
Description Radar Pulsed Power Transistor
Buy Stock & Price
PH3134-20L datasheet page 1 preview

FEATURES

● NPN silicon microwave power transistors
● Common base configuration
● Broadband Class C operation
● High efficiency inter-digitized geometry
● Diffused emitter ballasting resistors
● Gold metallization system
● Internal input and output impedance matching
● Hermetic metal/ceramic package
● RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing

ABSOLUTE MAXIMUM RATINGS

at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 2.4 146 -65 to +200 200 Units V V A W °C °C

ELECTRICAL SPECIFICATIONS

: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Leakage Current VCE = 40V Thermal Resistance Vcc = 36V, Pout = 20W Input Power Vcc = 36V,
PH3134-20L page 2 preview PH3134-20L page 3 preview