MACOM Technology Solutions PH3135-5M
Radar Pulsed Power Transistor
| Part No. | PH3135-5M |
|---|---|
| Datasheet | PH3135-5M Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Radar Pulsed Power Transistor |
| Buy | Stock & Price |
FEATURES
● NPN silicon microwave power transistors● Common base configuration
● Broadband Class C operation
● High efficiency inter-digitized geometry
● Diffused emitter ballasting resistors
● Gold metallization system
● Internal input and output impedance matching
● Hermetic metal/ceramic package
● RoHS compliant M/A-COM Products Released, 10 Jul 07 Outline Drawing
ABSOLUTE MAXIMUM RATINGS
at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 60 3.0 0.7 50 -65 to +200 200 Units V V A W °C °CELECTRICAL SPECIFICATIONS
: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA Collector-Emitter Leakage Current VCE = 40V Thermal Resistance Vcc = 33V, Pin = 0.7W Output Power Vcc = 33V, Pin = 0.7W Power Gain Vcc = 33V, Pin = 0.7W Collector Efficiency Vcc = 33V, Pin = 0.7W Input Return Loss Load Mismatch T...
