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PTVA082407NF - Thermally-Enhanced High Power RF LDMOS FET

General Description

The PTVA082407NF is a 240-watt LDMOS FET manufactured with the 48-V LDMOS process.

It is designed for use in multi-standard cellular power amplifier applications.

Key Features

  • a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 40 Gain 16 20 12 Efficiency 0 8 -20 PAR @ 0.01% CCDF 4 -40 0 25 -60 ptva082407.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PTVA082407NF Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz Description The PTVA082407NF is a 240-watt LDMOS FET manufactured with the 48-V LDMOS process. It is designed for use in multi-standard cellular power amplifier applications. It features a single ended design and input matching that allow for use from 746 MHz to 821 MHz. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Package Types: PG-HBSOF-4-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 900 mA, ƒ = 755 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 20 40 Gain 16 20 12 Efficiency 0 8 -20 PAR @ 0.