PTVA120501EA
Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.
Key Features
- Broadband input matching
- High gain and efficiency
- Typical Pulsed CW performance, 1200 - 1400MHz, 50 V, 300 µs pulse width, 10 % duty cycle, class AB - Output power at P1dB = 54 W - Efficiency = 55% - Gain = 16 dB
- Integrated ESD protection
- Low thermal resistance
- Pb-free and RoHS compliant
- Capable of withstanding a 10:1 load mismatch (all phase angles) at 50 W peak under RF pulse, 300 μS, 10% duty cycle. RF Characteristics Pulsed RF Performance (tested in the test fixture) VDD = 50 V, IDQ = 50 mA, POUT = 50 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width, 10 % duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps Drain Efficiency hD
- 5 17 - dB 46 50 - % Return Loss IRL - -10 -7 dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device-observe handling precautions! 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: Rev. 04, 2023-07-10 http
