Description
The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2
POUT (dBm) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C,
300 µs pulse width, 10% duty cycle
60 55 50 45 40 35 30
18
70
Efficiency
60
50
Output Power
40
1200 MHz
30
1300 MHz
20
1400 MHz
10
a120501ea_g1-1
22
26
30
34
3.
PTVA120501EA Datasheet
