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PXAE261908NF - High Power RF LDMOS FET

General Description

The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band.

Key Features

  • include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAE261908NF Package PG-HBSOF-6-3 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, VGS(PEAK) = 1.5 V, ƒ = 2675 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 40 Efficiency 16 20 12 0 Gain 8 -20.

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Full PDF Text Transcription (Reference)

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PXAE261908NF Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Description The PXAE261908NF is a 240-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAE261908NF Package PG-HBSOF-6-3 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 mA, VGS(PEAK) = 1.5 V, ƒ = 2675 MHz 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 20 40 Efficiency 16 20 12 0 Gain 8 -20 PAR @ 0.