PXAE261908NF Datasheet | MACOM Technology Solutions

Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 - 2675 MHz Description The PXAE261908NF is a 240-watt (P3d B) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2515 to 2675 MHz frequency band. Features include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAE261908NF Package PG-HBSOF-6-3 Peak/Average Ratio, Gain (d B) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 450 m A, VGS(PEAK) = 1.5 V, ƒ = 2675 MHz 3GPP WCDMA signal, 10 d B PAR, 3.84 MHz bandwidth Efficiency Gain -20 PAR @ 0.01% CCDF -40 0 pxae261908nf-gr1a -60 25 30 35 40 45 50 55 Average Output Power (d Bm) Features - Broadband internal input and output matching - Asymmetric Doherty design - Main: P3d B = 90 W typical - Peak: P3d B = 180 W typical - Typical pulsed CW performance, 2675 MHz, 28 V - Output power at P1d B = 51 W - Output power at P3d B = 240 W - Gain = 11.8 d B - Efficiency = 60% - Capable of handling 10:1 VSWR at 28 V, 32 W (CW) output...