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WGC20630V1A - Thermally Enhanced GaN Amplifier

General Description

The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.

Key Features

  • GaN on SiC HEMT Technology.
  • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs.
  • Output Power @ P4dB = 630 W.
  • Efficiency @ P4dB = 74%.
  • RoHS.
  • Compliant.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
WGC22630 Thermally Enhanced GaN Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz Features • GaN on SiC HEMT Technology • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs • Output Power @ P4dB = 630 W • Efficiency @ P4dB = 74% • RoHS* Compliant Applications • Cellular Power Description The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 (Tested in Doherty application test circuit) VDD = 48 V, IDQ = 360 mA, POUT = 49.3 dBm (85 W), TA = +25°C, Channel Bandwidth = 3.84 MHz, Peak/Average = 10 dB @ 0.