WS1A3940 Datasheet | MACOM Technology Solutions

Ga N on Si C Power Amplifier Module for 5G Description The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the Ga N on Si C HEMT transistors with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3940 has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crestfactor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed in a 6 mm X 6 mm land grid array (LGA) package. Features - Ga N on Si C technology - Frequency: 3700-3980 MHz - Average Output Power: 39.5 d Bm - PSAT = 48 d Bm - RF inputs matched to 50 Ω and DC matched - Gate bias supply for main and peak sides available from either side of device - Integrated harmonic terminations - Pb-free and Ro HS pliant WS1A3940 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the applications circuit for 3700 - 4100 MHz) VDD = 48 V, IDQ(main) = 45 m A, VGS(peak) = - 5.1 V, channel bandwidth = 20 MHz, input PAR = 10 d B @ 0.01% CCDF POUT Gain Efficiency ACPR - ACPR + (d BM) (d B) (%) (d Bc) (d Bc) (d B) 3700 MHz - 26 - 26 3850...