MACOM Technology Solutions XM1001-BD
The device has a conversion loss of 8.0 dB with a 20.0 dB image rejection across the band. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.FEATURES
● Fundamental Image Reject Mixer● 8.0 dB Conversion Loss
● 20.0 dB Image Rejection
● +25.0 dBm Input Third Order Intercept (IIP3)
● 100% On-Wafer RF Testing
● 100% Visual Inspection to MIL-STD-883 Method 2010
● RoHS* Compliant and 260°C Reflow Compatible
DESCRIPTION
M/A-COM Tech’s 12.0-40.0 GHz GaAs MMIC fundamental image reject mixer can be used as an up- or down-converter. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XM1001-BD-000V “V” - vacuum release gel paks XM1001-BD-EV1 evaluation module Chip Device Layout Rev. V1ABSOLUTE MAXIMUM RATINGS
Parameter Absolute Max. Gate Bias...