MACOM Technology Solutions XP1005-BD
The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.| Part No. | XP1005-BD |
|---|---|
| Datasheet | XP1005-BD Download |
| Manufacturer |  MACOM Technology Solutions |
| Description | Power Amplifier |
| Buy | Stock & Price |
FEATURES
● Excellent Saturated Output Stage● Balanced Design Provides Good Output Match
● 26.0 dB Small Signal Gain
● +24.0 dBm Saturated Output Power
● 100% On-Wafer RF, DC and Output Power Testing
● 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
● RoHS* Compliant and 260°C Reflow Compatible
DESCRIPTION
M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Ordering Information Part Number Package XP1005-BD-000V “V” - vacuum release gel paks XP1005-BD-EV1 evaluation module Chip Device Layout Rev. V2ABSOLUTE MAXIMUM RATINGS
Parameter Absolute Max. Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1050 mA +0.3 V +8.
