MX35UF2G14AC
FEATURES
- 1Gb/2Gb SLC NAND Flash
- Bus: x4
- Page size: (2048+64) byte
- Block size: (128K+4K) byte
- 4-bit ECC/ 528B is required
- Fast Read Access
- Supports Random data read out by x1 x2 & x4 modes, (1-1-1,1-1-2, 1-1-4)Note 1
- Latency of array to register: 25us
- Frequency: 104MHz
- Page Program Operation
- Page program time: 320us (typ)
- Block Erase Operation
- Block erase time: 1ms (typ.)
- Single Voltage Operation:
- VCC: 1.7
- 1.95V
MX35UF1G14AC MX35UF2G14AC 1.8V, 1Gb/2Gb Serial NAND Flash Memory
- BP bits for block group protection
- Low Power Dissipation
- Max 30m A Active current (Read/Program/Erase)
- Sleep Mode
- 50u A (Max) standby current
- High Reliability
- Program / Erase Endurance: Typical 100K cycles (with 4-bit ECC per (512+16) Byte)
- Data Retention: 10 years
- Wide Temperature Operating Range -40°C to +85°C
- Package: 8-WSON (8x6mm) All packaged devices are Ro HS pliant and Halogen-free.
Note 1. Which indicates the number of I/O for mand, address and...
