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Plastic-Encapsulate Transistors
FEATURES
• Complementary to KTC4374
2SA1662 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-80
VCEO
-80
VEBO
-5
IC -400
PC 500
TJ 150
Tstg -55to +150
Unit
V V V mA mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-1mA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-1mA,IC=0
Collector cut-off current
ICBO VCB=-80V,IE=0
Emitter cut-off current DC current gain Collector-emitter saturatio