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2SA1662 - PNP Transistor

Key Features

  • Complementary to KTC4374 2SA1662 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC -400 PC 500 TJ 150 Tstg -55to +150 Unit V V V mA mW.

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Datasheet Details

Part number 2SA1662
Manufacturer MAKOSEMI
File Size 83.18 KB
Description PNP Transistor
Datasheet download datasheet 2SA1662 Datasheet

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Plastic-Encapsulate Transistors FEATURES • Complementary to KTC4374 2SA1662 (PNP) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -80 VCEO -80 VEBO -5 IC -400 PC 500 TJ 150 Tstg -55to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=-1mA,IE=0 Collector-emitter breakdown voltage VCEO IC=-10mA,IB=0 Emitter-base breakdown voltage VEBO IE=-1mA,IC=0 Collector cut-off current ICBO VCB=-80V,IE=0 Emitter cut-off current DC current gain Collector-emitter saturatio