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MY025DBNE5 - 60V Dual N-Channel Enhancement Mode MOSFET

Description

The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Battery protection Load switch Unint

Features

  • VDSS 60 V ID 10 A PD(TA=25℃) 2 W RDS(ON)(atVGS =10V) 25 mΩ D1 D2 G1 PIN1 G2 S1 S2 Package Marking and Ordering Information Product ID Pack MY025DBNE5 PDFN5.
  • 6-8L Marking 10B06D Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Am.

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Datasheet Details

Part number MY025DBNE5
Manufacturer MAOYUAN
File Size 1.50 MB
Description 60V Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MY025DBNE5 Datasheet
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    MY025DBNE5 60V Dual N-Channel Enhancement Mode MOSFET General Description The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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