• Part: MY025DBNE5
  • Description: 60V Dual N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: MAOYUAN
  • Size: 1.50 MB
Download MY025DBNE5 Datasheet PDF
MAOYUAN
MY025DBNE5
Description The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application - Battery protection - Load switch - Uninterruptible power supply G2S2 S2 S2 G1S1S1 S1 Features VDSS PD(TA=25℃) RDS(ON)(at VGS =10V) 25 mΩ D1 D2 G1 PIN1 G2 S1 S2 Package Marking and Ordering Information Product ID Pack PDFN5- 6-8L Marking 10B06D Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Thermal Resistance,Junction-to-Ambient (Note 2) Symbol VDS VGS ID ID (100℃) IDM PD TJ,TSTG RθJA Qty(PCS) 5000 Limit 60 ±20 10 3.5 24 2 -55 To 150 62.5 Unit V V A A A W ℃...