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MY12N10D - 100V N-Channel Enhancement Mode MOSFET

General Description

The MY12N10D use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDSS 100 V ID 12 A RDS(ON)(atVGS =10V).

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Datasheet Details

Part number MY12N10D
Manufacturer MAOYUAN
File Size 1.87 MB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MY12N10D Datasheet

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MY12N10D 100V N-Channel Enhancement Mode MOSFET General Description The MY12N10D use advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDSS 100 V ID 12 A RDS(ON)(atVGS =10V) <140 mΩ RDS(ON)(atVGS =4.