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MY50N06D - 60V N-Channel Enhancement Mode MOSFET

Description

The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Battery protection Load switch Uninterr

Features

  • VDSS 60 V ID 50 A RDS(ON)(atVGS =10V).

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Datasheet Details

Part number MY50N06D
Manufacturer MAOYUAN
File Size 2.40 MB
Description 60V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet MY50N06D Datasheet

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Full PDF Text Transcription

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MY50N06D 60V N-Channel Enhancement Mode MOSFET General Description The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Application  Battery protection  Load switch  Uninterruptible power supply Features VDSS 60 V ID 50 A RDS(ON)(atVGS =10V) <13 mΩ RDS(ON)(atVGS =4.
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