MASPOWER MS60N60HGC1
MOSFET
| Part No. | MS60N60HGC1 |
|---|---|
| Datasheet | MS60N60HGC1 Download |
| Manufacturer | MASPOWER |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS=600V,ID=60A RDS(on)<0.18Ω @ VGS=10V● 100% avalanche tested
● Minimum Lot-to-Lot variations for robust device
● performance and reliable operation
APPLICATIONS
● ZVS phase shifted and other full bridge● Half bridge
● PFC and other boost converter
● Buck converter
● Single and two switch forward
● Flyback Absolute Ratings (Tc=25℃) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Drain Current-continuous ID 60 A Drain Current-pulse（1） IDM 210 A Single Pulsed Avalanche Energy （2） EAS 1580 mJ Avalanche Current, Repetitive or Non-Repetitive IAR 28 A PD TC=25℃ Maximum Power Dissipation Derate above 1040 W 25℃ Operating and Storage Temperature Range TJ,TSTG -55~+150 ℃
ELECTRICAL CHARACTERISTICS
(TCASE=25℃ unless otherwise specified) Parameter Symbol Tests conditions Min Typ Max Units Drain-Source Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID=250μA,VGS=0V 600 - VDS=VDSS,VGS=0V - - -V 25 μA H1.02 Maspower 1 Gate-Body Leakage Curre...
