MT2301 - P-Channel Enhancement Mode MOSFET

General Description

The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

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MT2301 p-channel enhancement mode mosfet by MATRIX MICROTECH - Datasheet Preview

Datasheet Details

Part number	MT2301
Manufacturer	MATRIX MICROTECH
File Size	333.23 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	MT2301 Datasheet

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DESCRIPTION MT2301 P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. FEATURES APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.