MT2301 Datasheet | MATRIX MICROTECH

‹ DESCRIPTION P- Channel Enhancement Mode MOSFET The MT2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ‹ Features ‹ APPLICATIONS ¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package design ¾ POWER Management in Note ¾ Portable Equipment ¾ Battery Powered System ¾ DC/DC Converter ¾ Load Switch ¾ DSC ‹ PIN CONFIGURATION DRAIN SOURCE GATE -1- .matrix-microtech..tw ‹...