DESCRIPTION
MT2301 P- Channel Enhancement Mode MOSFET FEATURES
APPLICATIONS
¾ -20V/-2.8A, RDS(ON) = 120mΩ @ VGS = -4.5V ¾ -20V/-2.5A, RDS(ON) = 170mΩ @ VGS = -2.5V ¾ Super high density cell design for extremely low RDS(ON) ¾ Exceptional on-resistance and maximum DC current capability ¾ SOT-23-3L package design ¾ POWER Management in Note ¾ Portable Equipment ¾ Battery Powered System ¾ DC/DC Converter ¾ Load Switch ¾ DSC PIN CONFIGURATION DRAIN 2 SOURCE 5 GATE 4 -1- ABSOLUTE MAXIMUM RATINGS
(TA=25℃ Unless Otherwise Noted) MT2301 P- Channel Enhancement Mode MOSFET Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25℃ TA = 70℃ Continuous Source Current (Diode Conduction) Power Dissipation TA = 25℃ TA = 70℃ Operating junction temperature range Storage temperature range Symbol VDS VGS ID IDM IS PD TJ TSTG Maximum -20 ±12 -2.8 -1.5 -10 -1.6 1.25 0.8 150 - 55 to 150 Unit V V A A A W OC OC THERMAL RESISTANCE RATINGS Thermal Resistanc...
