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MX1025D - Low Side GaN and MOSFET Driver

General Description

The MX1025D is a single channel low-side enhancementmode GaN FET and logic-level MOSFET driver for high switching frequency applications.

Key Features

  • undervoltage lockout (UVLO) and overtemperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. Features.
  • 1.25ns typical minimum input pulse width.
  • 2.5ns typical rising propagation delay.
  • 2.7ns typical falling propagation delay.
  • 300ps typical pulse distortion.
  • Independent 7A pull-up and 5A pull-down current.
  • 950ps typical rise time 100pF load).
  • 1150ps typical fall time (100pF load).
  • 2mm×.

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Datasheet Details

Part number MX1025D
Manufacturer MAXINMICRO
File Size 596.49 KB
Description Low Side GaN and MOSFET Driver
Datasheet download datasheet MX1025D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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General description The MX1025D is a single channel low-side enhancementmode GaN FET and logic-level MOSFET driver for high switching frequency applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.