Datasheet Details
| Part number | MX27517 |
|---|---|
| Manufacturer | MAXINMICRO |
| File Size | 470.29 KB |
| Description | Single 4A Peak Current Low-Side Gate Driver |
| Datasheet |
 MX27517 Datasheet
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General Description
SOT23-6L
Package dissipation rating
Package SOT-23 (6)
RθJA（℃/W） 108.1
Absolute maximum ratings
Parameter VDD to GND IN+ to GND OUT to GND Junction temperature Storage temperature, Tstg Leading temperature （soldering，10secs）
ESD Susceptibility HBM
Value -0.3 to 20V -0.3 to 20V -0.3 to VDD+0.3V
Key Features
- necessary to drive low-side enhancement mode Gallium Nitride (GaN) FETs. The MX27517 provides inverting and noninverting inputs to satisfy requirements for inverting and noninverting gate drive in a single device type. The inputs of the MX27517 are TTL/CMOS Logic compatible and withstand input voltages up to 18 V regardless of the VDD voltage. The MX27517 has split gate outputs, providing flexibility to adjust the turn on and turn off strength independently. The MX27517 has fast switching speed.