1N4005H-T Datasheet | Micro Commercial Components

Features - - - Low Current Leakage Metalurgically Bonded Construction High Junction Temperature 1 Amp Rectifier 50 - 1000 Volts DO-41 - - - Maximum Ratings Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Typical Thermal Resistance: 25°C/W Junction to Lead at 0.375" Lead Length P.C.B. Mounted MCC Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Voltage Blocking Reverse Voltage Voltage 1N4001H-T --50V 35V 50V 1N4002H-T --100V 70V 100V 1N4003H-T --200V 140V 200V 1N4004H-T --400V 280V 400V 1N4005H-T --600V 420V 600V 1N4006H-T --800V 560V 800V 1N4007H-T --1000V 700V 1000V A Cathode Mark B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 1.0A TA = 75°C Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum 1.1V IFM = 1.0A; Instantaneous VF Forward Voltage TJ = 25°C- Maximum DC Reverse Current At IR 5.0µA TJ = 25°C Rated DC Blocking 300µA TJ = 150°C Voltage Typical Junction CJ 15p F Measured at Capacitance 1.0MHz, VR=4.0V Maximum Reverse Trr 2.0us IF=0.5A, IR=1.0A, Recovery Time Irr=0.25A - Pulse test: Pulse width 300 µsec, Duty cycle 2% DIMENSIONS INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 DIM A B C D MAX .205 .107 .034 --- MAX 5.20 2.70 .90 --- NOTE .mccsemi. Revision: 2 2004/03/30 1N4001H-T thru 1N4007H-T Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 .8 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 25°C .2 Amps .8 1.2 Micro mercial ponents Figure 2 Forward Derating Curve .6 .4 Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 °C Average Forward Rectified Current - Amperes versus Ambient Temperature - °C 125 150 175 Figure 3 Junction Capacitance 100 60 40 20 p F 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - p F versus Reverse...