Micro Commercial Components 1N914B
500mW 100 Volt Silicon Epitaxial Diodes
| Part No. | 1N914B |
|---|---|
| Datasheet | 1N914B Download |
| Manufacturer |  Micro Commercial Components |
| Description | 500mW 100 Volt Silicon Epitaxial Diodes |
| Buy | Stock & Price |
ELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Maximum Repetitive Reverse Voltage Average Rectified Forward Current Power Dissipation Junction Temperature Peak Forward Surge Current VRRM IO PD TJ IFSM 100V 200mA 500mW 150OC 1.0A 4.0A Minimum Breakdown Voltage VR 100V 75V Maximum Instantaneous Forward Voltage 1N914 1N914 A VF 1.0V 1N914 B 1N914 B 720mV Maximum Reverse 25nA Current IR 5.0µA 50µA Typical Junction Capacitance CJ 4.0pF Reverse Recovery Time Trr 4.0nS *Pulse test: Pulse width 300 usec, Duty cycle 2% Pulse Width=1.0 second Pulse Width=1.0 microsecond IR=100µA, IR=5.0µA TJ = 25OC IFM = 10mA; IFM = 20mA; IFM = 100mA; IFM = 5.0mA; VR=20V, TJ=25OC, VR=75V, TJ=25OC, VR=20V, TJ=150OC Measured at 1.0MHz, VR=0V IF=10mA VR = 6V RL=100 Ù, Irr=1.0mA Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I. 500mW 100 Volt Silicon Epitaxial Diodes DO-35 D A Cathode Mark B D C DIMENSIONS INCHES MM DIM MIN MAX MIN A --- .166 --- B --- .079 --- C --- .020 --- D 1...
