Micro Commercial Components 2SA1736
PNP Silicon Power Transistors
| Part No. | 2SA1736 |
|---|---|
| Datasheet | 2SA1736 Download |
| Manufacturer |  Micro Commercial Components |
| Description | PNP Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● Low saturation voltage: VCE(sat) =0.5V(Max.) (IC=1.5A)● High speed switching: tstg=0.2us(Typ.)
● Small flat package
● PC=1~2W (Mounted on ceramic substrate)
● Complementary to 2SC4541
● Marking : LD x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1
MAXIMUM RATINGS
Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 3.0 A IB Base Current 0.6 A PC Collector power dissipation 500 mW PC* TJ TSTG Collector power dissipation Junction Temperature Storage Temperature 1000 mW -55 to +150 OC -55 to +150 OCELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage 50 --- --- Vdc (IC=10mAdc, IE=0) ICBO Collector-Base Cutoff Current --- --- 0.1 uAdc (VCB=60Vdc,IE=0) IEBO Emitter-Base Cutoff Current --- --- 0.1 uAdc (VEB=6.0Vdc, IC=0) ON CHARACTERISTICS hFE-1 DC Current Gain (IC=100mAdc, VCE=2.0Vdc) hFE-2 DC Current Gain (IC=2.0Adc, VCE=2.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage (IC=1.