Datasheet4U Logo Datasheet4U.com

2SD2012 - NPN Silicon Power Transistors

Key Features

  • High DC Current Gain: hFE(1) =100 (Min. ).
  • Low Saturation Voltage: VCE(sat)=1.0V (Max. ).
  • High Power Dissipation: PC=25W (TC=25OC).
  • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information).
  • Epoxy meets UL 94 V-0 flammability rating.
  • MaMxoimisuuremSRenastitiinvigtysLevel 1.
  • Mounting Torgue: 5 in-lbs Maximum Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 60 V VCBO Collect.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2012 NPN Transistor Toshiba Semiconductor
2SD2012 NPN Silicon Power Transistor STMicroelectronics
2SD2012 SILICON POWER TRANSISTOR SavantIC
2SD2012 NPN Transistor INCHANGE
2SD201 NPN Transistor INCHANGE

Other Datasheets by Micro Commercial Components

Part Number Description
2SD1005-U NPN Silicon Power Transistors
2SD1005-V NPN Silicon Power Transistors
2SD1005-W NPN Silicon Power Transistors
2SD1138-B NPN Transistor
2SD1138-C NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SD2012 Features • High DC Current Gain: hFE(1) =100 (Min.) • Low Saturation Voltage: VCE(sat)=1.0V (Max.) • High Power Dissipation: PC=25W (TC=25OC) • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating •MaMxoimisuuremSRenastitiinvigtysLevel 1 • Mounting Torgue: 5 in-lbs Maximum Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7.0 V IC Collector Current 3.0 A IB Base Current 0.