Micro Commercial Components LSDB3
SILICON BIDIRECTIONAL DIAC
FEATURES
Breakover Voltage: 32V Breakover Voltage Range: 28V to 36V SILICON BIDIRECTIONAL DIAC oMAXIMUM RATINGS
Operating JunctionTemperature: -40 C to +125 C Storage Temperature: -40 C to +125 C o o o Quadro MELFELECTRICAL CHARACTERISTICS
@ 25oC Unless Otherwise Specified Power dissipation on Printed Circuit(l=10mm) Repetitive Peak on-state Current PC 150mW Cathode Mark T A=50 C I TRM 2.0A tp= 2 0us,f=1 2 0Hz B A C D o Breakover Voltage VBO Min Typ Max 28 32 36V C=22nF(Note 2) DIM A B C D DIMENSIONS INCHES MIN MAX .130 .146 .008 .016 .055 .063 .067 MM MIN MAX 3.30 3.70 .20 .40 1.40 1.60 1.70 NOTE Breakover Voltage |+VBO | Symmetry ±3V ∅ C=22nF(Note 2) Output Voltage(Note 1) Breakover Current(Note 1) Rise Time(Note 1) SUGGESTED SOLDER PAD LAYOUT V o(min) I BO(max) Tr I B(max) 5V .155” 50uA 2.0us 10uA C=22nF .065” Leakage Current(Note 1) VB =0.5V BO(max) .022” NOTES:1.Electrical characteristics applicable in both forward and reverse directions. 2.Connected in parallel with the devices.