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MCG30N03 - N-Channel MOSFET

Features

  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Halogen free available upon request by adding suffix "-HF".
  • Epoxy meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID Parameter Drain-source Voltage Drain Current-Continuous TC = 25°C TC = 100°C Rating 30 30 21 IDM Pulsed Drain Current (Note 1) 60 VGS Gate-source Volta.

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Datasheet Details

Part number MCG30N03
Manufacturer MCC
File Size 726.08 KB
Description N-Channel MOSFET
Datasheet download datasheet MCG30N03 Datasheet
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MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High density cell design for ultra low Rdson • Fully characterized avalanche voltage and current • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID Parameter Drain-source Voltage Drain Current-Continuous TC = 25°C TC = 100°C Rating 30 30 21 IDM Pulsed Drain Current (Note 1) 60 VGS Gate-source Voltage ±20 PD Maximum Power Dissipation 25 RthJC Thermal Resistance,Junction-to-Case(Note 2) 5 E AS Single pulse avalanche energy (Note 5) 70 TJ Operating Junction Temperat
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