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SI2303 - P-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -30 -3 -10 f20 0.25 500 -55 to +150 -55 to +150 Unit V A A V W к/W к к G Halogen free available upo.

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Other Datasheets by Micro Commercial Components

Part Number Description
SI2300 N-Channel MOSFET
SI2301 P-Channel Enhancement Mode Field Effect Transistor
SI2301A P-Channel MOSFET
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SI2302A N-Channel MOSFET

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2303 Features • • • • • • • • • Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed a Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambientb Operating Junction Temperature Storage Temperature Rating -30 -3 -10 f20 0.25 500 -55 to +150 -55 to +150 Unit V A A V W к/W к к G Halogen free available upon request by adding suffix "-HF" -30V,-2.6A, RDS(ON)=130m¡@VGS= -10V -30V,-2.0A, RDS(ON)=180m¡@VGS= -4.