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SI3400AHE3 - N-Channel MOSFET

Key Features

  • High Dense Cell Design for Extremely Low RDS(ON).
  • AEC-Q101 Qualified.
  • Exceptional On-Resistance and Maximum DC Current Capability.
  • Epoxy Meets UL 94 V-0 Flammability Rating.
  • Moisture Sensitivity Level 1.
  • Halogen Free. “Green” Device (Note 1).
  • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI3400AHE3 N-Channel MOSFET Maximum Ratings.
  • Operating Junction Temperature Range: -.

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Features • High Dense Cell Design for Extremely Low RDS(ON) • AEC-Q101 Qualified • Exceptional On-Resistance and Maximum DC Current Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note 1) • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SI3400AHE3 N-Channel MOSFET Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature Range: -55°C to +150°C • Thermal Resistance: 96°C/W Junction to Ambient(Note 3) Parameter Symbol Rating Unit Drain -Source Voltage VDS 30 V Gate -Source Voltage VGS ±12 V Drain Current-Continuous ID 5.8 A Drain Current-Pulsed (Note 2) Power Dissipation IDM 30 A PD 1.3 W Note: 1.