MIC MMBT2222A
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
at Ta=25 Characteristic Symbol Rating 2222 2222A Collector-Base Voltage Vcbo 60 75 Collector-Emitter Voltage Vceo 30 40 Emitter-Base Voltage Vebo 5 6 Collector Current Ic 600 Collector Dissipation Ta=25* PD 225 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 Unit V V V mA mW PIN: STYLE NO 1 1 2 3 B E CELECTRICAL CHARACTERISTICS
at Ta=25 Characteristic Symbol Min Max Unit Test Conditions Collector-Base Breakdown Voltage MMBT2222 60 BVcbo MMBT2222A 75 V Ic= 10uA Ie=0 Collector-Emitter Breakdown Voltage MMBT2222 30 BVceo MMBT2222A 40 V Ic= 10mA Ib=0 Emitter-Base Breakdown Voltage MMBT2222 5 BVebo MMBT2222A 6 V Ie= 10uA Ic=0 Emitter Cutoff Current MMBT2222A Icex 10 nA Vce=60V Veb=3V Collect Cutoff Current MMBT2222 Icbo MMBT2222A Vcb= 50V Ie=0 10 nA Vcb= 60V Ie=0 Collect Cutoff Current MMBT2222 Icbo 10 nA Vcb=50VIe=0 Ta=125 MMBT2222A Vcb=60VIe=0 Ta=125 Collect Cutoff Current MMBT2222A Iebo 10 nA Vcb=3V Ic=0 DC Current Gain Hfe1 35 Vce=10VIc= 0.1mA DC C...