PC28F00BP33EFA Datasheet | Micron Technology

512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx, RC28F00AP30BFx, RC28F00AP30TFx, PC28F00BP30EFx Features - High performance - Easy BGA package Features - 100ns initial access for 512Mb, 1Gb Easy BGA - 105ns initial access for 2Gb Easy BGA - 25ns 16-word asychronous page read mode - 52 MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode - 4-, 8-, 16-, and continuous word options for burst mode - TSOP package Features - 110ns initial access for 512Mb, 1Gb TSOP - Both Easy BGA and TSOP package Features - Buffered enhanced factory programming (BEFP) at 2 MB/s (TYP) using a 512-word buffer - 1.8V buffered programming at 1.46 MB/s (TYP) using a 512-word buffer - Architecture - MLC: highest density at lowest cost - Symmetrically blocked architecture (512Mb, 1Gb, 2Gb) - Asymmetrically blocked architecture (512Mb, 1Gb); four 32KB parameter blocks: top or bottom configuration - 128KB main blocks - Blank check to verify an erased block - Voltage and power - VCC (core) voltage: 1.7- 2.0V - VCCQ (I/O) voltage: 1.7- 3.6V - Standy current: 70µA (TYP) for 512Mb; 75µA (TYP) for 1Gb - 52 MHz continuous synchronous read current: 21m A (TYP), 24m A (MAX) - Security - One-time programmable register: 64 OTP bits, programmed with unique information from Micron; 2112 OTP bits available for customer programming - Absolute write protection: V PP = V SS - Power-transition erase/program...