PSU8GA30AT
PSU8GA30AT is 3.3V 8Gb SLC NAND Flash Memory manufactured by MIRA.
Description
Date
0.1 Initial draft
February 22, 2011
Revise Copy-Back Program Operation
1.0 with Random Data Input diagram
June 30, 2011
Remark Preliminary Preliminary
Deutron Confidential 2011 Deuteron Electronics Corp. All Rights Reserved.
Page 3/61
NAND Flash Memory
PSU8GA30AT (1G x 8 bit NAND Flash Memory, SLC) Product List
Part Number PSU8GA30AT
Vcc Range 2.7V~3.6V
Organization X8
Package Type TSOP I
Features
- Voltage Supply: 2.7 V ~ 3.6V
- Organization
- Fast Write Cycle Time
- Program time: 300us (Typ.)
- Memory Cell Array: (4K + 218) x 256K x 8bit
- Block Erase time: 2.5ms (Typ.)
- Data Register: (4K + 218) x 8bit
- Automatic Program and Erase
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Page Program: (4K + 218) Bytes
- Program/Erase Lockout During Power Transitions
- Block Erase: (256K + 13.6K) Bytes
- Page Read Operation
- Reliable CMOS Floating Gate Technology
- Endurance: please refer to qualification report
- Page Size: (4K + 218) Byte
- Random Read: 30us (Max.)
- Data Retention: please refer to qualification report
- Operating temperature：
- Serial Access: 30ns (Min.)
- Memory Cell: 1bit/Memory Cell
- mercial: 0 to 70...
