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PSU8GA30AT - 3.3V 8Gb SLC NAND Flash Memory

General Description

Deutron Confidential  2011 Deuteron Electronics Corp.

All Rights Reserved.

Key Features

  • Voltage Supply: 2.7 V ~ 3.6V.
  • Organization.
  • Fast Write Cycle Time - Program time: 300us (Typ. ) - Memory Cell Array: (4K + 218) x 256K x 8bit - Block Erase time: 2.5ms (Typ. ) - Data Register: (4K + 218) x 8bit.
  • Automatic Program and Erase.
  • Command/Address/Data Multiplexed I/O Port.
  • Hardware Data Protection - Page Program: (4K + 218) Bytes - Program/Erase Lockout During Power Transitions - Block Erase: (256K + 13.6K) Bytes.
  • Page Read Operation.
  • Re.

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Datasheet Details

Part number PSU8GA30AT
Manufacturer MIRA
File Size 1.08 MB
Description 3.3V 8Gb SLC NAND Flash Memory
Datasheet download datasheet PSU8GA30AT Datasheet

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Full PDF Text Transcription (Reference)

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PSU8GA30AT NAND Flash Memory 3.3V 8Gb SLC NAND Flash Memory Specification and Technical Notes Part Number PSU8GA30AT Cell SLC PSU8GA30AT Density 8G Organization X8 Vcc 2.7V~3.6V PKG Type TSOP I Deutron Confidential  2011 Deuteron Electronics Corp. All Rights Reserved. Page 1/61 PSU8GA30AT Revision 1.0 June 30, 2011 NAND Flash Memory Deutron Confidential  2011 Deuteron Electronics Corp. All Rights Reserved. Page 2/61 PSU8GA30AT NAND Flash Memory Document Title PSU8GA30AT (1G x 8 bit NAND Flash Memory, SLC) Revision History Rev. Description Date 0.1 Initial draft February 22, 2011 Revise Copy-Back Program Operation 1.0 with Random Data Input diagram June 30, 2011 Remark Preliminary Preliminary Deutron Confidential  2011 Deuteron Electronics Corp.