MLSM BF820
NPN Transistor
FEATURES
● Low current (max.50 mA)● High voltage (max.300V)
● Telephony and professional communication equipment. BF820:1V C AJ B E BF822: 1X C AK B E BF820/BF822 Transistor (NPN) C B E SOT-23 top view C B E Schematic diagram
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current -Continuous Parameter BF820 BF822 BF820 BF822 Pc Collector Power Dissipation TJ , TSTG Operating and Storage Temperature Range Value 300 250 300 250 5 50 0.25 -55~ +150 Unit V V V mA W ℃ Copyright©MLS Microelectronics Co., Ltd Rev 1.0 Page 1 Total 3 BF820/BF822 Transistor (NPN)ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hfe VCE(sat) Cob fT Collector-base breakdown voltage IC=100μA,IE=0 Collector-emitter breakdown voltage IC=1mA,IB=0 BF820 BF822 BF820 BF822 Emitter-base breakdown voltage IE=100μA,IC=0 Collector cut-off...