MLSM FCX591
PNP Transistor
| Part No. | FCX591 |
|---|---|
| Datasheet | FCX591 Download |
| Manufacturer |  MLSM |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
● Power dissipation Marking:P1 FCX591 Transistor (PNP) P1 B CE SOT-89-3L top view Schematic diagram Marking and pin assignmentMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current–Continuous Pc Collector Power Dissipation TJ , TSTG Operating and Storage Temperature Range Value -80 -60 -5 -1 0.5 -55～+150 Unit V V V A W ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0 -80 V(BR)CEO* Collector-emitter breakdown voltage IC=-10mA,IB=0 -60 V(BR)EBO Emitter-base breakdown voltage IE=100μA,IC=0 -5 ICBO Collector cut-off current VCB=-60V, IE=0 -- IEBO Emitter cut-off current VEB=-4V,IC=0 -- ICES Collector- Emitter cut-off current VCES=-60V,IE=0 -- hFE1 VCE=-5V,IC=-1mA 100 hFE2 DC current gain hFE3 VCE=-5V,IC=-500mA 100 VCE=-5V,IC=-1A 80 hFE4 VCE=-5V,IC=-2A 15 VCE...