FMMT495 Description
pulse width ≤300μs, duty cycle≤ 2.0%. Typical Operating Characteristics FMMT495 Transistor (NPN) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) COLLECTOR CURREMT IC (mA) COLLECTOR CURREMT IC (mA) COLLECTOR POWER DISSIPATION PC (mW) COLLECTOR CUR RENT IC (mA)...
FMMT495 Key Features
- Low VCE(sat)
- hFE characterised up to 1A for high current gain hold up
- For general amplification
- hFE3- hFE4- VCE(sat)1- VCE(sat)2- VBE(on)- VBE(sat)- fT
- Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%