MLSM MT1D08A
N-Channel MOSFET
FEATURES
● Trench Power LV MOSFET technology● High Density Cell Design for Low RDS(ON)
● High Speed switching MT1D08A 130V/8A N-Channel MOSFET Product Summary VDS RDS(ON) TYP ID 130V 110mΩ@S11 0DV2 8A 130mΩD@1 4.5V Application
● Load Switch
● Isolated DC/DC convertor D 1D08A MLSM XXXX 1D08A: Device code XXXX: Code SOT-223 top view Schematic diagram G DS Marking and pin assignment
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage VGS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance, Junction to Ambient Tc=25°C 0 Tc=25°C Tc=25°C Tc=25°C Rating 130 ±20 150 -50 to 155 8 24 8 1.5 115 Unit V V °C °C A A A W °C/W Ordering Information (Example) Type Package Marking Minimum Package(pc...