MSC0206SE Description
MSC0206SE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0206SE Key Features
- VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface mount package
- PWM application
- Load switch