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MSC0211GE - Dual N-Channel MOSFET

Key Features

  • VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • ESD protected Lead Free.

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Datasheet Details

Part number MSC0211GE
Manufacturer MORESEMI
File Size 364.31 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet MSC0211GE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.