MSC0211GE Description
MSC0211GE 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0211GE Key Features
- VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- ESD protected
- PWM application
- Load switch