MSC0311WE Description
MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General.
MSC0311WE Key Features
- VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- ESD proteted
- PWM application -Load switch