MSC0311WE - Dual N-Channel MOSFET

Key Features

VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.
ESD proteted.

MSC0311WE dual n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSC0311WE
Manufacturer	MORESEMI
File Size	449.10 KB
Description	Dual N-Channel MOSFET
Datasheet	MSC0311WE Datasheet

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MSC0311WE 30V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.