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MSN0318W - N-Channel MOSFET

Key Features

  • VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current Lead Free.

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Datasheet Details

Part number MSN0318W
Manufacturer MORESEMI
File Size 618.84 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0318W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN0318W 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =18A RDS(ON) < 7mΩ @ VGS=10V RDS(ON) < 10mΩ @ VGS=4.