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MSN0325R - N-Channel MOSFET

Key Features

  • VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Lead Free.

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Datasheet Details

Part number MSN0325R
Manufacturer MORESEMI
File Size 507.47 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0325R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN0325R 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =25A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.