MSN0330D Description
MSN0330D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0330D Key Features
- VDS =30V,ID =30A RDS(ON) <14mΩ @ VGS=10V RDS(ON) <25mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply