MSN0360D Description
MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0360D Key Features
- VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible Power Supply