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MSN0360D - N-Channel MOSFET

Features

  • VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Lead Free.

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Datasheet Details

Part number MSN0360D
Manufacturer MORESEMI
File Size 1.27 MB
Description N-Channel MOSFET
Datasheet download datasheet MSN0360D Datasheet
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Full PDF Text Transcription

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MSN0360D 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =30V,ID =60A RDS(ON) < 14mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply PIN Configuration Marking and pin assignment TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0360D MSN0360D TO-252-2L Reel Size - Tape width - Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Pa
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