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MSN0608W - N-Channel MOSFET

Features

VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:14.5mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Lead Free.

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MSN0608W n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN0608W
Manufacturer	MORESEMI
File Size	579.29 KB
Description	N-Channel MOSFET
Datasheet	MSN0608W Datasheet

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Full PDF Text Transcription

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MSN0608W 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:14.

Published: Oct 29, 2016 |