MSN0608W Description
MSN0608W 60V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN0608W Key Features
- VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Load switch