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MSN0612W - N-Channel MOSFET

Features

  • VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Lead Free.

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Datasheet Details

Part number MSN0612W
Manufacturer MORESEMI
File Size 865.00 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN0612W Datasheet

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Full PDF Text Transcription

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MSN0612W 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.
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