MSN0620D Description
MSN0620D 60V(D-S) N-Channel Enhancement Mode Power MOS FET GENERAL.
MSN0620D Key Features
- VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply