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MSN0620D
60V(D-S) N-Channel Enhancement Mode Power MOS FET
GENERAL FEATURES
● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
PIN Configuration
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
MSN0620D
MSN0620D
TO-252-2L
Reel Size -
Tape width -
Quantity 2500PCS
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Para
MSN0620D Datasheet
