MORESEMI MSN0620Z
N-Channel Enhancement Mode Power MOS FET
| Part No. | MSN0620Z |
|---|---|
| Datasheet | MSN0620Z Download |
| Manufacturer | MORESEMI |
| Description | N-Channel Enhancement Mode Power MOS FET |
| Buy | Stock & Price |
FEATURES
● VDS =60V,ID =20A RDS(ON) <44mΩ @ VGS=10V● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply PIN Configuration Lead Free Marking and pin assignment TO-251 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0620Z MSN0620Z TO-251 Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Dissipation De
