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MSN0675D - N-Channel Enhancement Mode Power MOS FET

Features

  • VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number MSN0675D
Manufacturer MORESEMI
File Size 412.41 KB
Description N-Channel Enhancement Mode Power MOS FET
Datasheet download datasheet MSN0675D Datasheet

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Full PDF Text Transcription

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MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.
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