• Part: MSN0860Z
  • Description: N-Channel Enhancement Mode Power MOS FET
  • Manufacturer: MORESEMI
  • Size: 935.22 KB
MSN0860Z Datasheet (PDF) Download
MORESEMI
MSN0860Z

Key Features

  • VDS=75V;ID=60A@ VGS=10V; RDS(ON)<8.5mΩ @ VGS=10V
  • Special process technology for high ESD capability
  • Special designed for Convertors and power controls
  • High density cell design for ultra low Rdson
  • Fully characterized Avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation

Applications

  • Power switching application