MORESEMI MSN0860Z
N-Channel Enhancement Mode Power MOS FET
| Part No. | MSN0860Z |
|---|---|
| Datasheet | MSN0860Z Download |
| Manufacturer | MORESEMI |
| Description | N-Channel Enhancement Mode Power MOS FET |
| Buy | Stock & Price |
FEATURES
● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation Lead Free Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply PIN Configuration Marking and pin assignment Schematic diagram TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package MSN0860Z MSN0860Z TO-251-3L Reel Size - Tape width - Quantity -
ABSOLUTE MAXIMUM RATINGS
(TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continu
