MSN08B2K Description
MSN08B2K 80V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN08B2K Key Features
- VDS =80V,ID =120A RDS(ON) <6mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Automotive