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MSN15B5H - N-Channel MOSFET

Features

  • VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation.

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Datasheet preview – MSN15B5H

Datasheet Details

Part number MSN15B5H
Manufacturer MORESEMI
File Size 439.99 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN15B5H Datasheet
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Full PDF Text Transcription

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MSN15B5H 150V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.
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