MSN15B5H Description
MSN15B5H 150V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN15B5H Key Features
- VDSS =150V,ID =150A RDS(ON) < 8mΩ @ VGS=10V （Typ：6.6 mΩ）
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
- Automotive