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MSN2306 - N-Channel Enhancement Mode Power MOSFET

Features

  • VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Lead Free.

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Datasheet Details

Part number MSN2306
Manufacturer MORESEMI
File Size 383.65 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSN2306 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN2306 30V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 30V,ID = 5.8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.
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