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MSN2312 - N-Channel Enhancement Mode Power MOSFET

Features

  • VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Lead Free.

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Datasheet Details

Part number MSN2312
Manufacturer MORESEMI
File Size 334.20 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MSN2312 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MSN2312 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.
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